ON Semiconductor ENGR SR PRIN, DEVICE_TL in Bucheon, South Korea

Job Summary:

High-voltage (HV) SuperJunction (SJ) FET technology device engineer, working closely together with unit process development (UPD) team

Performance Objective:

  • Setting up a new device structure and process module required for a new HV SJ FET technology development, working together with UPD team in CRD

  • Planning DOEs to realize our new idea and evaluation data analysis for each learning cycle

  • Cost analysis, yield analysis & yield-up activities for new HV SJ FET technologies

  • Derivative technology development with new process modules, based on our proven technology

Requirements:

  • BS degree (MS preferred) in engineering school

  • 10 years experience in power device design, preferably in HV power device technology area

  • Good understanding basic power device physics and TCAD skill sets

  • Understanding of wafer fabrication processes

  • Excellent oral and written English communication skills

Job: Engineering

Organization: 506 OU Fairchild Korea Semiconductor, Ltd.

Title: ENGR SR PRIN, DEVICETL_

Location: KR-KR-Bucheon-si, Gyeonggi-do

Requisition ID: 1704575

ON Semiconductor is an Equal Employment Opportunity Employer and prohibits discrimination on the basis of age, race, color, religion, gender, sexual orientation, national origin, citizenship, protected veteran status, disability status, or any other federal, state or local protected classes. ON is committed to providing equal employment opportunity to qualified individuals, regardless of protect class status.